High-yield design technologies for InAlAs/InGaAs/InP-HEMT analog-digital ICs. IEEE Transactions on Microwave Theory and Techniques, (44)12:2361-2368, Dezember 1996. [PUMA: 12.05 4.49 GHz;0.1 ICs;low-noise MIMIC;millimetre amplifiers;Indium amplifiers;SCFL amplifiers;frequency analog-digital analogue-digital analysis arsenide;Frequency arsenide;III-V circuit circuits;field circuits;mixed compounds;Indium compounds;aluminium compounds;gallium computing;indium conversion;Low-noise dB;11.55 dB;InAlAs-InGaAs-InP;Indium design design;HEMT dividers;T-shaped dividers;circuit effect frequency gain;fabrication gallium gate;recess-etch integrated micron;4.11 noise;Circuit optimization;Circuit phosphide;HEMTs;Fabrication;Design resistance;circuit semiconductors;design semiconductors;high-yield simulation;60 stability static stopper;III-V technologies;HEMT to wave yield;integrated yield;load]
Power Amplification at 0.65 THz Using InP HEMTs. IEEE Transactions on Microwave Theory and Techniques, (60)3:724-729, März 2012. [PUMA: (SSPA);sub-millimeter (TMIC) 0.65 1.7 20 3 30 629 638 640 GHz GHz;frequency GHz;power THz;size Y-junction;combiner;splitter;power-combined amplification;solid-state amplifier amplifier;TMIC amplifier;electromagnetic amplifier;solid-state amplifiers;MMIC amplifiers;millimetre amplifiers;power circuit circuits;HEMT circuits;III-V combiners;power compounds;microwave coupled coupling;WR1.5 generation;Gain;Electromagnetic integrated mW;InP;Power mW;frequency measurement;MODFETs;Indium module;HEMT module;frequency monolithic mum;power nm;size package;waveguide phosphide;HEMT;millimeter power power-amplifier process;eight-stage semiconductors;indium terahertz to transistor;integrated transition;direct wave wave;power wave;terahertz waveguide;amplifier waveguides;Power]
A Miniaturized Unit Cell for Ultra-Broadband Active Millimeter-Wave Frequency Multiplication. Microwave Theory and Techniques, IEEE Transactions on, (62)6:1343--1351, Juni 2014. [PUMA: (MMIC) Field analysis;Logic and circuit circuits circuits;microwave devices devices;microwave effect frequency gates;MMICs;Millimeter integrated millimeter-wave monolithic multipliers;III--V multipliers;millimeter-microwave transistors;Harmonic transistors;Topology;GaAs wave]
Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz. Solid-State Circuits, IEEE Journal of, (46)10:2193--2202, 2011. [PUMA: 20 220 35 50 500 GCPW;GaAs;InAlAs-InGaAs;S-MMIC GHz GHz;grounded HEMT MMIC MMIC;cascode amplifier amplifiers;submillimetre arsenide;indium circuit circuit;class-B circuit;frequency circuits; circuits;III-V circuits;waveguide-to-microstrip communication compounds;coplanar compounds;submillimetre coplanar doubler frequency high-electron integrated mobility module;amplifier monolithic multipliers;gallium mum;submillimeter-wave nm;size semiconductors;aluminium sensors;size systems;metamorphic technology;metamorphic technology;monolithically to topology;grounded transistor transitions;HEMT transitions;next-generation wave waveguide waveguide;high-data-rate waveguides;frequency wireless]