A compact broadband unit cell for the design of broadband frequency multipliers is presented. Based on design methods from moderate frequencies, a novel integrated balanced field-effect transistor architecture is introduced, pushing ultra-broadband balanced frequency multiplication into the high millimeter-wave range. The realized microwave monolithic integrated circuits (MMICs) using this topology provide second harmonic generation over several decades using only a single integrated transistor unit cell. The circuits are fabricated in a metamorphic HEMT technology for convenient integration into multifunctional MMICs and achieve relative bandwidths of 199\% from 60 MHz to 80 GHz and 70.1\% in \$D\$- and \$G\$-band (110--170 and 140--220 GHz).
%0 Journal Article
%1 Lewark_MTT2014
%A Lewark, U.J.
%A Diebold, S.
%A Wagner, S.
%A Tessmann, A.
%A Leuther, A.
%A Zwick, T.
%A Kallfass, I.
%D 2014
%J Microwave Theory and Techniques, IEEE Transactions on
%K (MMIC) Field analysis;Logic and circuit circuits circuits;microwave devices devices;microwave effect frequency gates;MMICs;Millimeter integrated millimeter-wave monolithic multipliers;III--V multipliers;millimeter-microwave transistors;Harmonic transistors;Topology;GaAs wave
%N 6
%P 1343--1351
%R 10.1109/TMTT.2014.2318272
%T A Miniaturized Unit Cell for Ultra-Broadband Active Millimeter-Wave Frequency Multiplication
%V 62
%X A compact broadband unit cell for the design of broadband frequency multipliers is presented. Based on design methods from moderate frequencies, a novel integrated balanced field-effect transistor architecture is introduced, pushing ultra-broadband balanced frequency multiplication into the high millimeter-wave range. The realized microwave monolithic integrated circuits (MMICs) using this topology provide second harmonic generation over several decades using only a single integrated transistor unit cell. The circuits are fabricated in a metamorphic HEMT technology for convenient integration into multifunctional MMICs and achieve relative bandwidths of 199\% from 60 MHz to 80 GHz and 70.1\% in \$D\$- and \$G\$-band (110--170 and 140--220 GHz).
@article{Lewark_MTT2014,
abstract = {A compact broadband unit cell for the design of broadband frequency multipliers is presented. Based on design methods from moderate frequencies, a novel integrated balanced field-effect transistor architecture is introduced, pushing ultra-broadband balanced frequency multiplication into the high millimeter-wave range. The realized microwave monolithic integrated circuits (MMICs) using this topology provide second harmonic generation over several decades using only a single integrated transistor unit cell. The circuits are fabricated in a metamorphic HEMT technology for convenient integration into multifunctional MMICs and achieve relative bandwidths of 199{\%} from 60 MHz to 80 GHz and 70.1{\%} in {\$}D{\$}- and {\$}G{\$}-band (110--170 and 140--220 GHz).},
added-at = {2020-09-07T14:26:58.000+0200},
author = {Lewark, U.J. and Diebold, S. and Wagner, S. and Tessmann, A. and Leuther, A. and Zwick, T. and Kallfass, I.},
bdsk-url-1 = {https://doi.org/10.1109/TMTT.2014.2318272},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/23fa029a141b1b397baa1d705f14f66e7/ingmarkallfass},
doi = {10.1109/TMTT.2014.2318272},
interhash = {a5c6bccf65495d3b9274fb79d2e7043b},
intrahash = {3fa029a141b1b397baa1d705f14f66e7},
issn = {0018-9480},
journal = {Microwave Theory and Techniques, IEEE Transactions on},
keywords = {(MMIC) Field analysis;Logic and circuit circuits circuits;microwave devices devices;microwave effect frequency gates;MMICs;Millimeter integrated millimeter-wave monolithic multipliers;III--V multipliers;millimeter-microwave transistors;Harmonic transistors;Topology;GaAs wave},
month = jun,
number = 6,
pages = {1343--1351},
timestamp = {2025-05-26T10:46:15.000+0200},
title = {{A Miniaturized Unit Cell for Ultra-Broadband Active Millimeter-Wave Frequency Multiplication}},
volume = 62,
year = 2014
}
