Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz. Solid-State Circuits, IEEE Journal of, (46)10:2193--2202, 2011. [PUMA: 20 220 35 50 500 GCPW;GaAs;InAlAs-InGaAs;S-MMIC GHz GHz;grounded HEMT MMIC MMIC;cascode amplifier amplifiers;submillimetre arsenide;indium circuit circuit;class-B circuit;frequency circuits; circuits;III-V circuits;waveguide-to-microstrip communication compounds;coplanar compounds;submillimetre coplanar doubler frequency high-electron integrated mobility module;amplifier monolithic multipliers;gallium mum;submillimeter-wave nm;size semiconductors;aluminium sensors;size systems;metamorphic technology;metamorphic technology;monolithically to topology;grounded transistor transitions;HEMT transitions;next-generation wave waveguide waveguide;high-data-rate waveguides;frequency wireless]
Cryogenic Low-Noise mHEMT-Based MMIC Amplifiers for 4 - 12 GHz Band. Microwave and Wireless Components Letters, IEEE, (21)11:613--615, 2011. [PUMA: 100 11.6 12 22 26 4 41 8.1 GHz GHz;gain InAlAs-InGaAs;MMIC K;III-V K;temperature MMIC amplifiers; amplifiers;aluminium amplifiers;coplanar amplifiers;cryogenic arsenide;high chips;amplifier circuit;power circuits;broadband compounds;cryogenic compounds;low dB;gain dB;metamorphic electron electronics;gallium high integrated low-noise mHEMT-based mW;power mW;size microwave mobility nm;temperature noise semiconductors;MMIC technology;cryogenic temperature;frequency to transistor;monolithic transistors;indium very]