A 50 mW 220 GHz power amplifier module. 2010 IEEE MTT-S International Microwave Symposium, 45-48, May 2010. [PUMA: 207 220 230 50 GHz GHz;Power GHz;frequency MMIC;coplanar Waveguide;Module amplifier amplifier;HEMT;Coplanar amplifier;eight-way amplifiers;Power amplifiers;power circuits;Bandwidth;Frequency;MMICs;Indium combiners;power combining;amplifier coplanar coupler;Dolph-Chebychev electron faults;MMIC;Power generation;Coplanar mW;frequency mobility module;solid-state on-chip phosphide;HEMTs;Circuit power state technology;HEMT to transformer;power transistors;power transistors;tandem waveguide waveguides;Solid waveguides;high]
Power Amplification at 0.65 THz Using InP HEMTs. IEEE Transactions on Microwave Theory and Techniques, (60)3:724-729, March 2012. [PUMA: (SSPA);sub-millimeter (TMIC) 0.65 1.7 20 3 30 629 638 640 GHz GHz;frequency GHz;power THz;size Y-junction;combiner;splitter;power-combined amplification;solid-state amplifier amplifier;TMIC amplifier;electromagnetic amplifier;solid-state amplifiers;MMIC amplifiers;millimetre amplifiers;power circuit circuits;HEMT circuits;III-V combiners;power compounds;microwave coupled coupling;WR1.5 generation;Gain;Electromagnetic integrated mW;InP;Power mW;frequency measurement;MODFETs;Indium module;HEMT module;frequency monolithic mum;power nm;size package;waveguide phosphide;HEMT;millimeter power power-amplifier process;eight-stage semiconductors;indium terahertz to transistor;integrated transition;direct wave wave;power wave;terahertz waveguide;amplifier waveguides;Power]
Active frequency multiplier-by-nine \MMIC\ for millimeter-wave signal generation. in Proc. German Microwave Conference (GeMIC), Darmstadt, 1--4, 2011. [PUMA: 100 87 99 Fraunhofer GHz GHz;millimeter-wave HEMT IAF MMIC;buffer amplifier;frequency convertors;phase electron frequency generation;phase-noise generators; measurements;size metamorphic mobility multiplier-by-nine multipliers;high nm;MMIC;amplifiers;frequency noise;signal signal technology;X-band;active to transistors;millimetre wave]
A 200 GHz Monolithic Integrated Power Amplifier in Metamorphic HEMT Technology. Microwave and Wireless Components Letters, IEEE, (19)6:410--412, June 2009. [PUMA: 100 186 212 GHz GHz, HEMT amplifier, amplifiers amplifierscommunication electron frequency high high-resolution imaging integrated metamorphic millimeter-wave millimetre mobility monolithic nm,MMIC power radar, size systems, technology, to transistor transistors, wave]
Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz. Solid-State Circuits, IEEE Journal of, (46)10:2193--2202, 2011. [PUMA: 20 220 35 50 500 GCPW;GaAs;InAlAs-InGaAs;S-MMIC GHz GHz;grounded HEMT MMIC MMIC;cascode amplifier amplifiers;submillimetre arsenide;indium circuit circuit;class-B circuit;frequency circuits; circuits;III-V circuits;waveguide-to-microstrip communication compounds;coplanar compounds;submillimetre coplanar doubler frequency high-electron integrated mobility module;amplifier monolithic multipliers;gallium mum;submillimeter-wave nm;size semiconductors;aluminium sensors;size systems;metamorphic technology;metamorphic technology;monolithically to topology;grounded transistor transitions;HEMT transitions;next-generation wave waveguide waveguide;high-data-rate waveguides;frequency wireless]
A 120-145 GHz Heterodyne Receiver Chipset Utilizing the 140 GHz Atmospheric Window for Passive Millimeter-Wave Imaging Applications. Solid-State Circuits, IEEE Journal of, (45)10:1961--1967, 2010. [PUMA: 100 120 145 31 35 37 GHz GHz;frequency GHz;grounded HEMT circuit;mm circuits;MIMIC;coplanar controlled coplanar detection;millimetre electron imaging;power imaging;radio integrated mW;voltage mm mobility monolithic nm;HEMT oscillator;wavelength oscillators; receiver;high receivers;chipset receivers;voltage-controlled technology;MIMIC;VCO;atmospheric to transistor;millimeter utilization;frequency wave waveguide;heterodyne waveguides;heterodyne windows;broadband]
Cryogenic Low-Noise mHEMT-Based MMIC Amplifiers for 4 - 12 GHz Band. Microwave and Wireless Components Letters, IEEE, (21)11:613--615, 2011. [PUMA: 100 11.6 12 22 26 4 41 8.1 GHz GHz;gain InAlAs-InGaAs;MMIC K;III-V K;temperature MMIC amplifiers; amplifiers;aluminium amplifiers;coplanar amplifiers;cryogenic arsenide;high chips;amplifier circuit;power circuits;broadband compounds;cryogenic compounds;low dB;gain dB;metamorphic electron electronics;gallium high integrated low-noise mHEMT-based mW;power mW;size microwave mobility nm;temperature noise semiconductors;MMIC technology;cryogenic temperature;frequency to transistor;monolithic transistors;indium very]