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Wavelength tunable red AlGaInP-VECSEL emitting at around 660 nm, , , , , , and . (2011)Gain chip design, power scaling and intra-cavity frequency doubling with LBO of optically pumped red-emitting AlGaInP-VECSELs, , , , , , , and . (2016)Red AlGaInP-VECSEL emitting at around 665 nm: strain compensation and performance comparison of different epitaxial designs, , , and . (2012)Talk:Wavelength diversity with AlGaInP disk lasers, , , , , , and . (2010)Talk:Frequency doubled AlGaInP-VECSEL with high output power at 331 nm and a large wavelength tuning range in the UV, , , , and . (2012)All quantum dot mode-locked semiconductor disk laser emitting at 655 nm, , , , , and . Applied Physics Letters, (2014)High optical output power in the UVA range of a frequency-doubled, strain-compensated AlGaInP-VECSEL, , , , , and . Applied Physics Express, (2014)Talk:Wavelength tunable red AlGaInP-VECSEL emitting at around 660 nm, , , , , , and . (2011)Talk:Red AlGaInP-VECSEL emitting at around 665 nm: strain compensation and performance comparison of different epitaxial designs, , , and . (2012)Comparison of AlGaInP-VECSEL gain structures, , , , , and . Journal of crystal growth, (2015)