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Disambiguation of "Pey, Kin Leong"

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The variation of the leakage current characteristics of W/Ta2O5/W MIM capacitors with the thickness of the bottom W electrode.

, , , , , and . Microelectronics Reliability, (2016)

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Michael Niklas Kindig University of Stuttgart

Stefan King University of Stuttgart

 

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Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach., , , and . Microelectronics Reliability, 55 (9-10): 1422-1426 (2015)Monte Carlo model of reset stochastics and failure rate estimation of read disturb mechanism in HfOx RRAM., , , and . IRPS, page 5. IEEE, (2015)Structure of the oxide damage under progressive breakdown., , , , , and . Microelectronics Reliability, 45 (5-6): 845-848 (2005)Correlation of failure mechanism of constant-current-stress and constant-voltage-stress breakdowns in ultrathin gate oxides of nMOSFETs by TEM., , , , , , and . Microelectronics Reliability, 43 (9-11): 1471-1476 (2003)Dielectric Breakdown in 2D Layered Hexagonal Boron Nitride - The Knowns and the Unknowns., , , , and . IRPS, page 1-12. IEEE, (2019)Area and pulsewidth dependence of bipolar TDDB in MgO magnetic tunnel junction., , , , , , , , , and 2 other author(s). IRPS, page 6. IEEE, (2018)Spatio-Temporal Defect Generation Process in Irradiated HfO2 MOS Stacks: Correlated Versus Uncorrelated Mechanisms., , , , , , , , , and 1 other author(s). IRPS, page 1-8. IEEE, (2019)Spectroscopy of SILC trap locations and spatial correlation study of percolation path in the high-κ and interfacial layer., , and . IRPS, page 5. IEEE, (2015)Conductive filament formation at grain boundary locations in polycrystalline HfO2 -based MIM stacks: Computational and physical insight., , , , , , and . Microelectronics Reliability, (2016)Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM., , , , , and . Microelectronics Reliability, (2016)