Author of the publication

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

No persons found for author name Maruyama, Takashi
add a person with the name Maruyama, Takashi
 

Other publications of authors with the same name

Dissemination of UTC(NICT) by Means of QZSS., , , , , , , , , and 1 other author(s). IEEE Trans. Instrumentation and Measurement, 62 (6): 1537-1544 (2013)New system of glioma removal using intraoperative MRI combined with functional mapping., , , , , , , , and . CARS, volume 1230 of International Congress Series, page 1219-1221. Elsevier, (2001)Efficacy of 5-aminolevulinic acid-induced fluorescence detection in malignant glioma surgery., , , , , , and . CARS, volume 1268 of International Congress Series, page 1290. Elsevier, (2004)Traction control design using model predictive control with fuel cut method for an internal combustion engine., and . CCTA, page 584-589. IEEE, (2017)Design and Experiment of Via-Less and Small-Radiation Waveguide to Microstrip Line Transitions for Millimeter Wave Radar Modules., and . IEICE Transactions, 101-B (12): 2425-2434 (2018)High-Throughput Electron Beam Direct Writing of VIA Layers by Character Projection with One-Dimensional VIA Characters., , , , , and . IEICE Transactions, 96-A (12): 2458-2466 (2013)Intra-operative "real-time" navigation system updated with open MRI., , , , , , , , and . CARS, volume 1230 of International Congress Series, page 1222-1223. Elsevier, (2001)Evolutionary Algorithm Based on Schemata Exploiter., and . PDPTA, page 423-426. CSREA Press, (2005)High-throughput electron beam direct writing of VIA layers by character projection using character sets based on one-dimensional VIA arrays with area-efficient stencil design., , , , , and . ASP-DAC, page 255-260. IEEE, (2013)Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs., , , and . IEICE Transactions, 89-C (7): 949-953 (2006)