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SRAM read current variability and its dependence on transistor statistics.

S. Venugopalan, V. Joshi, L. Zamudio, M. Goldbach, G. Burbach, R. Bentum, and S. Balasubramanian. CICC, page 1-4. IEEE, (2013)

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Accurate Prediction of Random Telegraph Noise Effects in SRAMs and DRAMs.A. Karthik, A. Demir, S. Venugopalan, and J. Roychowdhury. IEEE Trans. on CAD of Integrated Circuits and Systems, 32 (1): 73-86 (2013)SAMURAI: An accurate method for modelling and simulating non-stationary Random Telegraph Noise in SRAMs.A. Karthik, A. Demir, S. Venugopalan, and J. Roychowdhury. DATE, page 1113-1118. IEEE, (2011)BSIM - SPICE Models Enable FinFET and UTB IC Designs.N. Paydavosi, S. Venugopalan, Y. Chauhan, J. Duarte, S. Jandhyala, A. Niknejad, and C. Hu. IEEE Access, (2013)Flicker noise in advanced CMOS technology: Effects of halo implant.N. Paydavosi, S. Venugopalan, A. Sachid, A. Niknejad, C. Hu, S. Dey, S. Martin, and X. Zhang. ESSDERC, page 238-241. IEEE, (2013)SRAM read current variability and its dependence on transistor statistics.S. Venugopalan, V. Joshi, L. Zamudio, M. Goldbach, G. Burbach, R. Bentum, and S. Balasubramanian. CICC, page 1-4. IEEE, (2013)BSIM - Industry standard compact MOSFET models.Y. Chauhan, S. Venugopalan, M. Karim, S. Khandelwal, N. Paydavosi, P. Thakur, A. Niknejad, and C. Hu. ESSCIRC, page 30-33. IEEE, (2012)Evaluation of the BSIM6 compact MOSFET model's scalability in 40nm CMOS technology.M. Chalkiadaki, A. Mangla, C. Enz, Y. Chauhan, M. Karim, S. Venugopalan, A. Niknejad, and C. Hu. ESSCIRC, page 34-37. IEEE, (2012)A non-iterative physical procedure for RF CMOS compact model extraction using BSIM6.S. Venugopalan, K. Dandu, S. Martin, R. Taylor, C. Cirba, X. Zhang, A. Niknejad, and C. Hu. CICC, page 1-4. IEEE, (2012)BSIM compact MOSFET models for SPICE simulation.Y. Chauhan, S. Venugopalan, N. Paydavosi, P. Kushwaha, S. Jandhyala, J. Duarte, S. Agnihotri, C. Yadav, H. Agarwal, A. Niknejad and 1 other author(s). MIXDES, page 23-28. IEEE, (2013)A Dynamically Biased Multiband 2G/3G/4G Cellular Transmitter in 28 nm CMOS.S. Seth, D. Kwon, S. Venugopalan, S. Son, Y. Zuo, V. Bhagavatula, J. Lim, D. Oh, and T. Cho. J. Solid-State Circuits, 51 (5): 1096-1108 (2016)

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SRAM read current variability and its dependence on transistor statistics.

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copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML SRAM read current variability and its dependence on transistor statistics.

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SRAM read current variability and its dependence on transistor statistics.