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Disambiguation of "Suemitsu, Tetsuya"

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Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band.

, , , , , , , , , , , , , , , , and . ESSDERC, page 318-321. IEEE, (2013)

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InP and GaN high electron mobility transistors for millimeter-wave applications.. IEICE Electronic Express, 12 (13): 20152005 (2015)Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs., , , , and . Microelectronics Reliability, 42 (1): 47-52 (2002)An optically clocked transistor array (OCTA) for 40-Gb/s, bidirectional serial-to-parallel conversion of asynchronous burst optical packets., , , and . IEICE Electronic Express, 3 (7): 129-135 (2006)Graphene-channel FETs for photonic frequency double-mixing conversion over the sub-THz band., , , , , , , , , and 7 other author(s). ESSDERC, page 318-321. IEEE, (2013)Room Temperature Intense Terahertz Emission from a Dual Grating Gate Plasmon-Resonant Emitter Using InAlAs/InGaAs/InP Material Systems., , , , and . IEICE Transactions, 93-C (8): 1286-1289 (2010)Improved stability in wide-recess InP HEMTs by means of a fully passivated two-step-recess gate., , , , , and . IEICE Electronic Express, 3 (13): 310-315 (2006)InP HEMT Technology for High-Speed Logic and Communications., and . IEICE Transactions, 90-C (5): 917-922 (2007)High-Performance Graphene Field-Effect Transistors With Extremely Small Access Length Using Self-Aligned Source and Drain Technique., , , , , , and . Proceedings of the IEEE, 101 (7): 1603-1608 (2013)Impact of T-gate stem height on parasitic gate delay time in InGaAs-HEMTs., , , and . ESSDERC, page 115-118. IEEE, (2013)Site-Selective Epitaxy of Graphene on Si Wafers., , , , , , , , , and 2 other author(s). Proceedings of the IEEE, 101 (7): 1557-1566 (2013)