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Evidence of terbium and oxygen co-segregation in annealed AlN:Tb, , , , , and . Applied physics letters, 110 (22): 222102 (2017)The 1.681 eV luminescence center in chemical-vapor-deposited homoepitaxial diamond films, , , , and . (1994)Three-dimensional GaN for semipolar light emitters, , , , , , , , , and 11 other author(s). (2011)Growth of high-quality, uniform c-axis-oriented zinc oxide nano-wires on a-plane sapphire substrate with zinc oxide templates., , , , , , , and . Microelectronics Journal, 40 (2): 306-308 (2009)The role of stacking faults and their associated 0.13 ev acceptor state in doped and undoped ZnO layers and nanostructures., , , , , , , , and . Microelectronics Journal, 40 (2): 210-214 (2009)Quaternary AlxInyGa1−x−yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission, , , , , and . Journal of Crystal Growth, 315 (1): 254 - 257 (2011)15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV).Quaternary Al<sub>x</sub>In<sub>y</sub>Ga<sub>1-x-y</sub>N layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission, , , , , and . (2010)Time-resolved photoluminescence of semipolar GaInN/GaN multiquantum well structures, , , , , , , , and . (2007)Investigation on local Ga and In corporation of GaInN quantum wells on facets of selectively grown GaN stripes, , , , , , , , , and 3 other author(s). (2006)