Author of the publication

Threshold Voltage Investigation of Recessed Dual-Gate MISHEMT: Simulation Study.

, , , and . VDAT, volume 892 of Communications in Computer and Information Science, page 380-393. Springer, (2018)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Simulation study of Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for high temperature applications., , , and . Microelectronics Reliability, 52 (8): 1610-1612 (2012)Numerical analysis of localised charges impact on static and dynamic performance of nanoscale cylindrical surrounding gate MOSFET based CMOS inverter., , , and . Microelectronics Reliability, 53 (2): 236-244 (2013)Variability Investigation of Double Gate JunctionLess (DG-JL) Transistor for Circuit Design Perspective., , and . VDAT, volume 711 of Communications in Computer and Information Science, page 496-503. Springer, (2017)Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and linearity analysis., , , and . Microelectronics Reliability, 52 (6): 989-994 (2012)Immunity against temperature variability and bias point invariability in double gate tunnel field effect transistor., , , and . Microelectronics Reliability, 52 (8): 1617-1620 (2012)Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range., , , and . Microelectronics Reliability, 52 (6): 974-983 (2012)Temperature dependent subthreshold model of long channel GAA MOSFET including localized charges to study variations in its temperature sensitivity., , , and . Microelectronics Reliability, 54 (1): 37-43 (2014)Drain current model for a gate all around (GAA) p-n-p-n tunnel FET., , , and . Microelectronics Journal, 44 (6): 479-488 (2013)Improved Gate Modulation in Tunnel Field Effect Transistors with Non-rectangular Tapered Y-Gate Geometry., , and . VDAT, volume 711 of Communications in Computer and Information Science, page 463-473. Springer, (2017)Analysis of Electrolyte-Insulator-Semiconductor Tunnel Field-Effect Transistor as pH Sensor., , , and . VDAT, volume 711 of Communications in Computer and Information Science, page 249-258. Springer, (2017)