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Disambiguation of "Nagy, Roland"

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Scalable Quantum Memory Nodes Using Nuclear Spins in Silicon Carbide

, , , , , , and . Physical review applied, 19 (3): 034026 (2023)
DOI: 10.1103/PhysRevApplied.19.034026

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To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Lotte Nagy University of Stuttgart

Roland Weil University of Stuttgart

Univ. -Prof. Dr. Roland Kontermann University of Stuttgart

apl. Prof. Dr. Roland Gehrke University of Stuttgart

Roland Mandel

 

Other publications of authors with the same name

Narrow inhomogeneous distribution of spin-active emitters in silicon carbide, , , , , , , , , and 7 other author(s). Applied physics letters, 118 (14): 144003 (2021)Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide, , , , , , , , , and 5 other author(s). Physical Review Applied, (2018)Silicon vacancy defects in 4H-silicon carbide semiconductor for quantum applications. Universität Stuttgart, Stuttgart, Dissertation, (2019)Laser Writing of Scalable Single Color Centers in Silicon Carbide, , , , , , , , , and 2 other author(s). Nano Letters, 19 (4): 2377-2383 (2019)Legendárium navigator: Software system for supporting transylvanian tourism., , , , and . SISY, page 233-238. IEEE, (2016)Scalable Quantum Memory Nodes Using Nuclear Spins in Silicon Carbide, , , , , , and . Physical review applied, 19 (3): 034026 (2023)Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide, , , , , , , , , and 10 other author(s). Nature Communications, (2020)Spectrally Stable Defect Qubits with no Inversion Symmetry for Robust Spin-To-Photon Interface, , , , , and . Physical Review Applied, 11 (4): 044022 (2019)Spectrally stable defect qubits with no inversion symmetry for robust spin-to-photon interface., , , , , and . CoRR, (2018)Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide, , , , , , , , , and 5 other author(s). Physical Review Applied, 9 (3): 034022 (2018)