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Technologies for (sub-) 45nm Analog/RF CMOS - Circuit Design Opportunities and Challenges.

, , , , and . CICC, page 679-686. IEEE, (2006)

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Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs., , , , , , , , and . IRPS, page 6. IEEE, (2015)GaN-based HEMTs tested under high temperature storage test., , , , , , , and . Microelectronics Reliability, 51 (9-11): 1717-1720 (2011)Technologies for (sub-) 45nm Analog/RF CMOS - Circuit Design Opportunities and Challenges., , , , and . CICC, page 679-686. IEEE, (2006)Physical origin of current collapse in Au-free AlGaN/GaN Schottky Barrier Diodes., , , , , , , , and . Microelectronics Reliability, 54 (9-10): 2196-2199 (2014)Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate., , , , , , , , , and . Microelectronics Reliability, (2016)Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level., , , , , , , , , and . Microelectronics Reliability, (2017)Breakdown investigation in GaN-based MIS-HEMT devices., , , , , , , , , and 2 other author(s). ESSDERC, page 377-380. IEEE, (2014)The Potential of FinFETs for Analog and RF Circuit Applications., , , , , , , , , and 5 other author(s). IEEE Trans. on Circuits and Systems, 54-I (11): 2541-2551 (2007)Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions., , , , , , , , and . Microelectronics Reliability, 46 (5-6): 702-712 (2006)RFCV Test Structure Design for a Selected Frequency Range., , , , and . IEICE Transactions, 88-C (5): 817-823 (2005)