Author of the publication

A 1 × 400 Backside-Illuminated SPAD Sensor With 49.7 ps Resolution, 30 pJ/Sample TDCs Fabricated in 3D CMOS Technology for Near-Infrared Optical Tomography.

, , , , and . J. Solid-State Circuits, 50 (10): 2406-2418 (2015)