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Modeling of program Vth distribution for 3-D TLC NAND flash memory.

, , , , and . SCIENCE CHINA Information Sciences, 62 (4): 42401:1-42401:10 (2019)

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Modeling of program Vth distribution for 3-D TLC NAND flash memory., , , , and . SCIENCE CHINA Information Sciences, 62 (4): 42401:1-42401:10 (2019)A two-dimensional simulation method for investigating charge transport behavior in 3-D charge trapping memory., , , , and . SCIENCE CHINA Information Sciences, 59 (12): 122403:1-122403:10 (2016)