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Univ. -Prof. Dr. Michael Buchmeiser University of Stuttgart

Replication data of Buchmeiser group for: "Synthetic and Structural Peculiarities of Neutral and Cationic Molybdenum Imido and Tungsten Oxo Alkylidene Complexes Bearing Weakly Coordinating N-Heterocyclic Carbenes", , , , , , and . Dataset, (2024)Related to: M. R. Buchmeiser, D. Wang, R. Schowner, L. Stöhr, F. Ziegler, S. Sen, W. Frey,; Synthetic and Structural Peculiarities of Neutral and Cationic Molybdenum Imido and Tungsten Oxo Alkylidene Complexes Bearing Weakly Coordinating N-Heterocyclic Carbenes; Eur. J. Inorg. Chem., in press (2024). doi: 10.1002/ejic.202400082.
 

Other publications of authors with the same name

An Experimental Load-Pull Based Large-Signal RF Reliability Study of SiGe HBTs., , , , and . BCICTS, page 1-4. IEEE, (2021)High-Frequency Circuit Design Oriented Compact Bipolar Transistor Modeling with HICUM.. IEICE Transactions, 88-C (6): 1098-1113 (2005)Implementation and quality testing for compact models implemented in Verilog-A., , , , and . DATE, page 403-408. IEEE, (2016)IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF., , , , , , , , , and 10 other author(s). ESSDERC, page 74-77. IEEE, (2019)Interactive presentation: Statistical simulation of high-frequency bipolar circuits., , , and . DATE, page 1397-1402. EDA Consortium, San Jose, CA, USA, (2007)Architecture and Advanced Electronics Pathways Toward Highly Adaptive Energy- Efficient Computing., , , , , , , , , and 9 other author(s). Proceedings of the IEEE, 107 (1): 204-231 (2019)Evaluation of Stacked-CNTFET Structures for High-performance Applications., , , and . BCICTS, page 1-4. IEEE, (2021)Compact Hierarchical Bipolar Transistor Modeling With HiCUM, and . International Series on Advances in Solid State Electronics and Technology World Scientific, (2010)Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications., , , , , , , , , and 8 other author(s). Proceedings of the IEEE, 105 (6): 1035-1050 (2017)Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs., , , and . BCICTS, page 1-4. IEEE, (2021)