Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Graphene FET evaluation for RF and mmWave circuit applications.

S. Fregonese, J. Morales, M. Matos, C. Maneux, and T. Zimmer. ISCAS, page 2920-2923. IEEE, (2015)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Dr. -Ing. Sébastien Chartier University of Stuttgart

Other publications of authors with the same name

CNTFET Modeling and Reconfigurable Logic-Circuit Design.I. O'Connor, J. Liu, F. Gaffiot, F. Prégaldiny, C. Lallement, C. Maneux, J. Goguet, S. Fregonese, T. Zimmer, L. Anghel and 2 other author(s). IEEE Trans. on Circuits and Systems, 54-I (11): 2365-2379 (2007)Design and Modeling of a Neuro-Inspired Learning Circuit Using Nanotube-Based Memory Devices.S. Liao, J. Retrouvey, G. Agnus, W. Zhao, C. Maneux, S. Fregonese, T. Zimmer, D. Chabi, A. Filoramo, V. Derycke and 2 other author(s). IEEE Trans. on Circuits and Systems, 58-I (9): 2172-2181 (2011)Substrate-coupling effect in BiCMOS technology for millimeter wave applications.S. Fregonese, R. D'Esposito, M. Matos, A. Kohler, C. Maneux, and T. Zimmer. NEWCAS, page 1-4. IEEE, (2015)Modeling of Strained CMOS on Disposable SiGe Dots: Strain Impacts on Devices' Electrical CharacteristicsS. Fregonese, Y. Zhuang, and J. Burghartz. IEEE Transactions on Electron Devices, 54 (9): 2321-2326 (2007)A class-J power amplifier for 5G applications in 28nm CMOS FD-SOI technology.T. Hanna, N. Deltimple, and S. Fregonese. SBCCI, page 110-113. ACM, (2017)Qualitative assessment of epitaxial graphene FETs on SiC substrates via pulsed measurements and temperature variation.C. Mukherjee, S. Fregonese, T. Zimmer, C. Maneux, H. Happy, and D. Mele. ESSDERC, page 305-308. IEEE, (2014)Electro-Thermal Limitations and Device Degradation of SiGe HBTs with Emphasis on Circuit Performance.S. Fregonese, C. Mukherjee, H. Rücker, P. Chevalier, G. Fischer, D. Céli, M. Deng, M. Couret, F. Marc, C. Maneux and 1 other author(s). BCICTS, page 1-7. IEEE, (2021)Representation of the SiGe HBT's thermal impedance by linear and recursive networks.H. Mnif, T. Zimmer, J. Battaglia, and S. Fregonese. Microelectronics Reliability, 44 (6): 945-950 (2004)From nanoscale technology scenarios to compact device models for ambipolar devices.S. Fregonese, C. Maneux, and T. Zimmer. ICECS, page 57-61. IEEE, (2010)Characterization and modeling of low-frequency noise in CVD-grown graphene FETs.C. Mukherjee, J. Morales, S. Fregonese, T. Zimmer, C. Maneux, H. Happy, and W. Wei. ESSDERC, page 176-179. IEEE, (2015)

PUMA

Disambiguation of "Fregonese, Sébastien"

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Graphene FET evaluation for RF and mmWave circuit applications.

Please choose a person to relate this publication to

Dr. -Ing. Sébastien Chartier University of Stuttgart

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Fregonese, Sébastien"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Graphene FET evaluation for RF and mmWave circuit applications.

Please choose a person to relate this publication to

Dr. -Ing. Sébastien Chartier University of Stuttgart

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Graphene FET evaluation for RF and mmWave circuit applications.