Author of the publication

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

A spin Hall effect-based multi-level cell for MRAM.

Q. Shi, Z. Wang, Y. Gao, L. Chang, W. Kang, Y. Zhang, and W. Zhao. NANOARCH, page 143-144. ACM, (2016)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Jiachen Zhao University of Stuttgart

Jianyu Zhao University of Stuttgart

Zhibin Zhao University of Stuttgart

Other publications of authors with the same name

Low-Power (1T1N) Skyrmionic Synapses for Spiking Neuromorphic Systems.T. Bhattacharya, S. Li, Y. Huang, W. Kang, W. Zhao, and M. Suri. IEEE Access, (2019)A low-cost built-in error correction circuit design for STT-MRAM reliability improvement.W. Kang, W. Zhao, Z. Wang, Y. Zhang, J. Klein, Y. Zhang, C. Chappert, and D. Ravelosona. Microelectronics Reliability, 53 (9-11): 1224-1229 (2013)Skyrmion-Electronics: An Overview and Outlook.W. Kang, Y. Huang, X. Zhang, Y. Zhou, and W. Zhao. Proceedings of the IEEE, 104 (10): 2040-2061 (2016)One-to-one disjoint path covers in hypercubes with faulty edges.F. Wang, and W. Zhao. The Journal of Supercomputing, 75 (8): 5583-5595 (2019)DASM: Data-Streaming-Based Computing in Nonvolatile Memory Architecture for Embedded System.L. Chang, X. Ma, Z. Wang, Y. Zhang, Y. Ding, W. Zhao, and Y. Xie. IEEE Trans. VLSI Syst., 27 (9): 2046-2059 (2019)Crossbar architecture based on 2R complementary resistive switching memory cell.W. Zhao, Y. Zhang, J. Klein, D. Querlioz, D. Chabi, D. Ravelosona, C. Chappert, J. Portal, M. Bocquet, H. Aziza and 2 other author(s). NANOARCH, page 85-92. ACM, (2012)A Novel Cross-point MRAM with Diode Selector Capable of High-Density, High-Speed, and Low-Power In-Memory Computation.C. Ding, W. Kang, H. Zhang, Y. Zhang, and W. Zhao. NANOARCH, page 72-78. ACM, (2018)ZUMA: Enabling Direct Insertion/Deletion Operations with Emerging Skyrmion Racetrack Memory.Z. Liang, G. Sun, W. Kang, X. Chen, and W. Zhao. DAC, page 158. ACM, (2019)A High-Speed Robust NVM-TCAM Design Using Body Bias Feedback.B. Yan, Z. Li, Y. Zhang, J. Yang, H. Li, W. Zhao, and P. Chia. ACM Great Lakes Symposium on VLSI, page 69-74. ACM, (2015)A Skyrmion Racetrack Memory based Computing In-memory Architecture for Binary Neural Convolutional Network.Y. Pan, P. Ouyang, Y. Zhao, S. Yin, Y. Zhang, S. Wei, and W. Zhao. ACM Great Lakes Symposium on VLSI, page 271-274. ACM, (2019)

PUMA

Disambiguation of "Zhao, Weisheng"

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

A spin Hall effect-based multi-level cell for MRAM.

Please choose a person to relate this publication to

Jiachen Zhao University of Stuttgart

Jianyu Zhao University of Stuttgart

Zhibin Zhao University of Stuttgart

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Zhao, Weisheng"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A spin Hall effect-based multi-level cell for MRAM.

Please choose a person to relate this publication to

Jiachen Zhao University of Stuttgart

Jianyu Zhao University of Stuttgart

Zhibin Zhao University of Stuttgart

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

A spin Hall effect-based multi-level cell for MRAM.