Author of the publication

Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices.

, , , , , and . ESSDERC, page 160-163. IEEE, (2016)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

In-memory adder functionality in 1S1R arrays., , , , and . ISCAS, page 1338-1341. IEEE, (2015)Simulation and comparison of two sequential logic-in-memory approaches using a dynamic electrochemical metallization cell model., , , and . Microelectronics Journal, 45 (11): 1416-1428 (2014)Constraints on sequence processing speed in biological neuronal networks., , , , and . ICONS, page 16:1-16:9. ACM, (2019)Scaling Potential of Local Redox Processes in Memristive SrTiO3 Thin-Film Devices., , , , , , , , , and . Proceedings of the IEEE, 100 (6): 1979-1990 (2012)Metallic nanogaps with access windows for liquid based systems., , , , and . Microelectronics Journal, 37 (7): 591-594 (2006)Memristors: Devices, Models, and Applications Scanning the Issue., , and . Proceedings of the IEEE, 100 (6): 1911-1919 (2012)Weibull analysis of the kinetics of resistive switches based on tantalum oxide thin films., , , and . ESSDERC, page 174-177. IEEE, (2013)Memristive Sorting Networks Enabled by Electrochemical Metallization Cells., , , , and . IJUC, 12 (4): 303-317 (2016)Lowering forming voltage and forming-free behavior of Ta2O5 ReRAM devices., , , , , and . ESSDERC, page 164-167. IEEE, (2016)Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devices., , , , , and . ESSDERC, page 160-163. IEEE, (2016)