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Disambiguation of "Quay, R."

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Single-Input GaN Gate Driver based on Depletion-Mode Logic integrated with a 600 V GaN-on-Si Power Transistor

, , , , , , and . in Proc. 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, (2016)

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R. Koerner

R. Watty

Dr. -Ing. Kim Riedmüller University of Stuttgart

Materialgerechtes Fügen von Faserverbundprofilen, , , , and . Forschungsbericht, Universität Stuttgart, Institut für Leichtbau Entwerfen und Konstruieren, Stuttgart, (2014)

Jun. -Prof. Dr. -Ing. Alina Roitberg University of Stuttgart

On Transferability of Driver Observation Models from Simulated to Real Environments in Autonomous Cars, , , , and . 2023 IEEE 26th International Conference on Intelligent Transportation Systems (ITSC), page 3129-3134. IEEE, (2023)
On Transferability of Driver Observation Models from Simulated to Real Environments in Autonomous Cars, , , , and . 2023 IEEE 26th International Conference on Intelligent Transportation Systems (ITSC), page 3129-3134. IEEE, (2023)Quantized Distillation : Optimizing Driver Activity Recognition Models for Resource-Constrained Environments, , , , and . 2023 IEEE/RSJ International Conference on Intelligent Robots and Systems (IROS), page 5479-5486. IEEE, (2023)

Ph. D. Curtis Runstedler University of Stuttgart

Alchemy and Exemplary Poetry in Middle English Literature. The New Middle Ages Palgrave Macmillan, Cham, (2023)
 

Other publications of authors with the same name

A GaN-on-Si Based Logic, Driver and DC-DC Converter Circuit with Closed-Loop Peak Current-Mode Control, , , , , and . in. Proc. PCIM Europe, Nuremberg, Germany, (May 2019)A Single-Chip 77 GHz Heterodyne Receiver MMIC in 100 nm AlGaN/GaN HEMT Technology, , , , , , , and . in Proc. IEEE Int. Microwave Symposium, Baltimore, (2011)A High-gain High-power Amplifier MMIC for V-band Applications using 100 nm AlGaN/GaN Dual-gate HEMTs, , , , , , , , and . Int. Journal of Microwave and Wireless Technologies, (2012)A fully scalable compact Small-Signal Modeling approach for 100 nm AlGaN/GaN HEMTs, , , , , , and . in Proc. European Microwave Week, Nuremberg, (2013)Large-Area Lateral AlGaN/GaN-on-Si Field-Effect Rectifier with 0.2 V Turn-On Voltage, , , , , and . IEEE Electron Device Letters, 41 (7): 993-996 (May 2020)AlGaN/GaN-based HEMT Variable Gain Amplifiers for W-Band Operation, , , , , , and . in Proc. IEEE Int. Microwave Symp., Seattle, (2013)High Power Density DC-DC Converters Using Highly Integrated Monolithic Half-Bridge GaN ICs, , , , , , , , and . in Proc. PCIM Europe Conference, (2021)PCB-Embedded GaN-on-Si Half-Bridge and Driver ICs With On-Package Gate and DC-Link Capacitors, , , , , , , , , and 3 other author(s). IEEE Transactions on Power Electronics, 36 (1): 83-86 (2021)Towards Highly-Integrated High-Voltage Multi-MHz GaN-on-Si Power ICs and Modules, , , , , , and . in. Proc. PCIM Europe, Nuremberg, Germany, (2018)A GaN-based Current Sense Amplifier for GaN HEMTs with Integrated Current Shunts, , , , , , and . in. Proc. 32nd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), (2020)