Author of the publication

Phase-Change and Redox-Based Resistive Switching Memories.

, , and . Proceedings of the IEEE, 103 (8): 1274-1288 (2015)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Scaling Potential of Local Redox Processes in Memristive SrTiO3 Thin-Film Devices., , , , , , , , , and . Proceedings of the IEEE, 100 (6): 1979-1990 (2012)Constraints on sequence processing speed in biological neuronal networks., , , , and . ICONS, page 16:1-16:9. ACM, (2019)Simulation and comparison of two sequential logic-in-memory approaches using a dynamic electrochemical metallization cell model., , , and . Microelectronics Journal, 45 (11): 1416-1428 (2014)In-memory adder functionality in 1S1R arrays., , , , and . ISCAS, page 1338-1341. IEEE, (2015)Metallic nanogaps with access windows for liquid based systems., , , , and . Microelectronics Journal, 37 (7): 591-594 (2006)Memristors: Devices, Models, and Applications Scanning the Issue., , and . Proceedings of the IEEE, 100 (6): 1911-1919 (2012)Weibull analysis of the kinetics of resistive switches based on tantalum oxide thin films., , , and . ESSDERC, page 174-177. IEEE, (2013)Memristive Sorting Networks Enabled by Electrochemical Metallization Cells., , , , and . IJUC, 12 (4): 303-317 (2016)Atomistic Investigation of the Schottky Contact Conductance Limits at SrTiO3 based Resistive Switching Devices., , , , , and . NVMTS, page 1-4. IEEE, (2018)Lowering forming voltage and forming-free behavior of Ta2O5 ReRAM devices., , , , , and . ESSDERC, page 164-167. IEEE, (2016)