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Quaternary AlxInyGa1−x−yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission, , , , , and . Journal of Crystal Growth, 315 (1): 254 - 257 (2011)15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV).Green Photoluminescence of Single InPQuantum Dots grown on Al0.66Ga0.33InP/AlInP Distributed Bragg Reflectors, , , and . (2007)Reliability of red 660 nm AlGaInP-VCSEL, , , , and . (2008)Poster:Miniaturized Mid-Infrared Sensor Technologies, , , , , and . (2009)Poster:Red VCSEL (655 nm) for POF applications, , , , , and . (2009)Talk:Growth and characterization of InP quantum dots deposited on InAs seed layer, , , , , , and . (2009)Talk:Influence of GaN pyramid structural properties on the luminescence of InGaN quantum films, , and . (2008)Talk:Single photon emission of MOVPE grown InGaAs quantum dots exhibiting linewidths down to 12 µeV, , , , , , , , and . (2009)Talk:Effect of the growth conditions on the early stages of pyramidal semipolar template growth, , , , and . (2012)Talk:Local changes in the growth of the active region on semipolar templates produced by SAG, , , , , , , and . (2013)