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PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process., , , and . IEICE Transactions, 101-C (5): 311-316 (2018)High Quality Pentacene Film Formation on N-Doped LaB6 Donor Layer., , , and . IEICE Transactions, 99-C (5): 535-540 (2016)The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO2 Directly Deposited on Si(100)., and . IEICE Transactions, 102-C (6): 435-440 (2019)Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer., , and . IEICE Transactions, 94-C (5): 767-770 (2011)A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels., and . IEICE Transactions, 90-C (5): 994-999 (2007)In-situ formation of Hf-based MONOS structures for non-volatile memory applications., and . IEICE Electronic Express, 12 (24): 20150969 (2015)Modulation of PtSi Work Function by Alloying with Low Work Function Metal., , and . IEICE Transactions, 94-C (5): 775-779 (2011)The Effect of Kr/O2 Sputtering on the Ferroelectric Properties of SrBi2Ta2O9 Thin Film Formation., , , , , and . IEICE Transactions, 102-C (6): 441-446 (2019)Impact of Si surface roughness on MOSFET characteristics with ultrathin HfON gate insulator formed by ECR plasma sputtering., , and . IEICE Electronic Express, 10 (18): 20130651 (2013)Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator., , and . IEICE Electronic Express, 8 (18): 1461-1466 (2011)