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Contact and junction engineering in bulk FinFET technology for improved ESD/latch-up performance with design trade-offs and its implications on hot carrier reliability., , , and . IRPS, page 3. IEEE, (2018)ESD Behavior of AlGaN/GaN HEMT on Si: Physical Insights, Design Aspects, Cumulative Degradation and Failure Analysis., , , , , , , and . VLSI Design, page 361-365. IEEE Computer Society, (2017)UV-Assisted Probing of Deep-Level Interface Traps in GaN MISHEMTs and Their Role in Threshold Voltage & Gate Leakage Instabilities., , , , , and . IRPS, page 1-5. IEEE, (2019)On the trap assisted stress induced safe operating area limits of AlGaN/GaN HEMTs., , , , , , , and . IRPS, page 4. IEEE, (2018)Towards predictable and risk-free enterprise systems., , and . DSAA, page 1-7. IEEE, (2015)Safe Operating Area (SOA) reliability of Polarization Super Junction (PSJ) GaN FETs., , , and . IRPS, page 4. IEEE, (2018)First Demonstration and Physical Insights into Time-Dependent Breakdown of Graphene Channel and Interconnects., , , , , , , and . IRPS, page 1-6. IEEE, (2019)Physical Insights into the Low Current ESD Failure of LDMOS-SCR and its Implication on Power Scalability., , , , and . IRPS, page 1-5. IEEE, (2019)Current Filament Dynamics Under ESD Stress in High Voltage (Bidirectional) SCRs and It's Implications on Power Law Behavior., , , and . IRPS, page 1-5. IEEE, (2019)Pinot: Realtime OLAP for 530 Million Users., , , , , , , , , and 1 other author(s). SIGMOD Conference, page 583-594. ACM, (2018)