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Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor., , , , , and . Microelectronics Reliability, 45 (5-6): 819-822 (2005)Investigation of the reliability of 4H-SiC MOS devices for high temperature applications., , , , , , , and . Microelectronics Reliability, 51 (8): 1346-1350 (2011)Analytical stress characterization after different chip separation methods., , , and . Microelectronics Reliability, 54 (9-10): 1735-1740 (2014)Novel cost-efficient contactless distributed monitoring concept for smart battery cells., , , , , , and . ISIE, page 1342-1347. IEEE, (2012)Galvanically isolated differential data transmission using capacitive coupling and a modified Manchester algorithm for smart power converters., , , , , , , , and . ISIE, page 2596-2600. IEEE, (2014)Program FFlexCom : High Frequency Flexible Bendable Electronics For Wireless Communication Systems, , , , , , , , , and 44 other author(s). 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) : 13-15 Nov. 2017, Piscataway, New Jersey, IEEE, (2017)Electrical reliability aspects of through the gate implanted MOS structures with thin oxides., , , , and . Microelectronics Reliability, 41 (7): 987-990 (2001)Current conduction mechanism of MIS devices using multidimensional minimization system program., , , , and . Microelectronics Reliability, 55 (7): 1028-1034 (2015)Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors., , , , , and . Microelectronics Reliability, 43 (8): 1253-1257 (2003)Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC., , , , , and . Microelectronics Reliability, 53 (12): 1841-1847 (2013)