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Degraded Frequency-Tuning Range and Oscillation Amplitude of LC-VCOs due to the Nonquasi-Static Effect in MOS Varactors., , , , , , , , , and . IEICE Transactions, 92-C (6): 777-784 (2009)Evaluation methodology for current collapse phenomenon of GaN HEMTs., , , , , , , and . IRPS, page 3. IEEE, (2018)CMOS/BiCMOS Technology., , , , , , , , , and 2 other author(s). The VLSI Handbook, CRC Press, (1999)Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations., , , , , , , , , and 2 other author(s). Mathematics and Computers in Simulation, 79 (4): 1096-1106 (2008)An RF MEMS Variable Capacitor with Intelligent Bipolar Actuation., , , , , , , , , and 3 other author(s). ISSCC, page 582-583. IEEE, (2008)1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation., , , , , , , , , and 1 other author(s). IEICE Transactions, 88-C (2): 247-254 (2005)MOSFET harmonic distortion analysis up to the non-quasi-static frequency regime., , , , , , , , , and . CICC, page 827-830. IEEE, (2005)Technology of FinFET for High RF and Analog/Mixed-Signal Performance Circuits., , , and . IEICE Transactions, 98-C (6): 455-460 (2015)