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Through silicon via to FinFET noise coupling in 3-D integrated circuits.

A. Abadi, W. Guo, X. Sun, K. Ali, J. Raskin, M. Rack, C. Neve, M. Choi, V. Moroz, G. der Plas, I. Wolf, E. Beyne, and P. Absil. ICICDT, page 1-4. IEEE, (2015)

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Pierre Nacke University of Stuttgart

Dr. rer. nat. Pierre Eckold University of Stuttgart

Pierre Kuna University of Stuttgart

Jean-Noel Grad University of Stuttgart

Jean-Louis Hoslauer University of Stuttgart

Other publications of authors with the same name

RF and non-linearity characterization of porous silicon layer for RF-ICs.Y. Belaroussi, A. Slimane, M. Belaroussi, M. Trabelsi, G. Scheen, K. Ali, and J. Raskin. IDT, page 79-82. IEEE, (2014)Optical Fibre NO2 Sensor Based on Lutetium Bisphthalocyanine in a Mesoporous Silica Matrix.M. Debliquy, D. Lahem, A. Bueno-Martinez, C. Caucheteur, M. Bouvet, I. Recloux, J. Raskin, and M. Olivier. Sensors, 18 (3): 740 (2018)Back-gate bias effect on UTBB-FDSOI non-linearity performance.B. Esfeh, V. Kilchytska, B. Parvais, N. Planes, M. Haond, D. Flandre, and J. Raskin. ESSDERC, page 148-151. IEEE, (2017)Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation.R. Doria, A. Cerdeira, J. Raskin, D. Flandre, and M. Pavanello. Microelectronics Journal, 39 (12): 1663-1670 (2008)Engineered substrates: The foundation to meet current and future RF requirements.J. Meil, B. Aspar, E. Desbonnets, and J. Raskin. VLSI-DAT, page 1-4. IEEE, (2015)SOI technology: An opportunity for RF designers?J. Raskin. VLSI-DAT, page 1-2. IEEE, (2014)Automated Design of a 13.56 MHz 19µW Passive Rectifier With 72% Efficiency Under 10µA load.P. Haddad, G. Gosset, J. Raskin, and D. Flandre. J. Solid-State Circuits, 51 (5): 1290-1301 (2016)Automated design of a 13.56 MHz corner-robust efficient differential drive rectifier for 10 μA load.P. Haddad, J. Raskin, and D. Flandre. ISCAS, page 1822-1825. IEEE, (2016)FinFET versus UTBB SOI - A RF perspective.J. Raskin. ESSDERC, page 84-88. IEEE, (2015)Variability of UTBB MOSFET analog figures of merit in wide frequency range.S. Makovejev, B. Esfeh, J. Raskin, V. Kilchytska, D. Flandre, V. Barral, N. Planes, and M. Haond. ESSDERC, page 222-225. IEEE, (2014)

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Disambiguation of "Raskin, Jean-Pierre"

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Through silicon via to FinFET noise coupling in 3-D integrated circuits.

Please choose a person to relate this publication to

Pierre Nacke University of Stuttgart

Dr. rer. nat. Pierre Eckold University of Stuttgart

Pierre Kuna University of Stuttgart

Jean-Noel Grad University of Stuttgart

Jean-Louis Hoslauer University of Stuttgart

Other publications of authors with the same name

Disambiguation

PUMA

Disambiguation of "Raskin, Jean-Pierre"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Through silicon via to FinFET noise coupling in 3-D integrated circuits.

Please choose a person to relate this publication to

Pierre Nacke University of Stuttgart

Dr. rer. nat. Pierre Eckold University of Stuttgart

Pierre Kuna University of Stuttgart

Jean-Noel Grad University of Stuttgart

Jean-Louis Hoslauer University of Stuttgart

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

Through silicon via to FinFET noise coupling in 3-D integrated circuits.