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MOVPE grown quaternary AllnGaN layers for polarization matched quantum wells and efficient active regions

, , , and . (2011)

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Poster:MOVPE grown quaternary AlInGaN layers for polarization matched quantum wells and efficient active regions, , , and . (2010)Numerische Simulation auf massiv parallelen Rechnern (SFB 393)., and . it+ti - Informationstechnik und Technische Informatik, 44 (3): 170-174 (2002)High wavelength tunability of InGaN quantum wells grown on semipolar GaN pyramid facets, , , , , , and . (2010)Talk:Quaternary AlInGaN Layers Deposited by Pulsed Metal-Organic Vapor-Phase Epitaxy for High Efficient Light Emission, , , and . (2010)Talk:Properties of InGaN nanostructures on micro-pyramids, , , and . (2009)Poster:Characteristics of blue quaternary nitride quantum dots deposited by modified metal-organic epitaxy, , , , and . (2009)Quaternary Al<sub>x</sub>In<sub>y</sub>Ga<sub>1-x-y</sub>N layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission, , , , , and . (2010)MOVPE grown quaternary AllnGaN layers for polarization matched quantum wells and efficient active regions, , , and . (2011)Quaternary AlxInyGa1−x−yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission, , , , , and . Journal of Crystal Growth, 315 (1): 254 - 257 (2011)15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV).Talk:GaN micropyramids with high In-containing InGaN nanostructures, , , and . (2010)