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Robustness study of 1700 V 45 mΩ SiC MOSFETs.

Q. Molin, M. Kanoun, C. Raynaud, and H. Morel. ICIT, page 830-834. IEEE, (2018)

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VTH subthreshold hysteresis technology and temperature dependence in commercial 4H-SiC MOSFETs.B. Asllani, A. Fayyaz, A. Castellazzi, H. Morel, and D. Planson. Microelectronics Reliability, (2018)VTH-Hysteresis and Interface States Characterisation in SiC Power MOSFETs with Planar and Trench Gate.B. Asllani, A. Castellazzi, O. Avino-Salvado, A. Fayyaz, H. Morel, and D. Planson. IRPS, page 1-6. IEEE, (2019)Robustness study of 1700 V 45 mΩ SiC MOSFETs.Q. Molin, M. Kanoun, C. Raynaud, and H. Morel. ICIT, page 830-834. IEEE, (2018)Threshold voltage instability in SiC MOSFETs as a consequence of current conduction in their body diode.O. Avino-Salvado, H. Morel, C. Buttay, D. Labrousse, and S. Lefebvre. Microelectronics Reliability, (2018)A Study on Shunt Resistor-based Current Measurements for Fast Switching GaN Devices.T. Wickramasinghe, S. Azzopardi, B. Allard, C. Buttay, C. Joubert, C. Martin, J. Mogniotte, H. Morel, P. Bevilacqua, and T. Le. IECON, page 1573-1578. IEEE, (2019)Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications.T. Salah, S. Khachroumi, and H. Morel. Sensors, 10 (1): 388-399 (2010)Analysis of Power Switching Losses Accounting Probe Modeling.K. Ammous, H. Morel, and A. Ammous. IEEE Trans. Instrumentation and Measurement, 59 (12): 3218-3226 (2010)A Novel Approach to Accurately Determine the tq Parameter of Thyristors.H. Garrab, A. Jedidi, H. Morel, and K. Besbes. IEEE Trans. Industrial Electronics, 64 (1): 206-216 (2017)Avalanche robustness of SiC Schottky diode.I. Dchar, C. Buttay, and H. Morel. Microelectronics Reliability, (2016)Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs.C. Chen, D. Labrousse, S. Lefebvre, M. Petit, C. Buttay, and H. Morel. Microelectronics Reliability, 55 (9-10): 1708-1713 (2015)

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Robustness study of 1700 V 45 mΩ SiC MOSFETs.

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copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Robustness study of 1700 V 45 mΩ SiC MOSFETs.

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Robustness study of 1700 V 45 mΩ SiC MOSFETs.