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Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations.

, , , , and . ESSDERC, page 184-187. IEEE, (2017)

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Energy conserving, self-force free Monte Carlo simulations of semiconductor devices on unstructured meshes., and . Comput. Phys. Commun., (2015)Variability Characterisation of Nanoscale Si and InGaAs Fin Field-Effect-Transistors at Subthreshold., , , , and . J. Low Power Electronics, 11 (2): 256-262 (2015)Optimisation and parallelisation of a 2D MOSFET multi-subband ensemble Monte Carlo simulator., , , , , , and . IJHPCA, 27 (4): 483-492 (2013)Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors., , , , , , and . IEEE Trans. on CAD of Integrated Circuits and Systems, 30 (6): 841-851 (2011)Quantifying uncertainties in first-principles alloy thermodynamics using cluster expansions., , and . J. Comput. Physics, (2016)Development of an exchange-correlation functional with uncertainty quantification capabilities for density functional theory., , and . J. Comput. Physics, (2016)Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs., , and . LSSC, volume 4818 of Lecture Notes in Computer Science, page 115-122. Springer, (2007)Study of strained effects in nanoscale GAA nanowire FETs using 3D Monte Carlo simulations., , , , and . ESSDERC, page 184-187. IEEE, (2017)Optimization of an Octree-based 3-D Parallel Meshing Algorithm for the Simulation of Small-Feature Semiconductor Devices., , and . PARCO, volume 33 of John von Neumann Institute for Computing Series, page 439-446. Central Institute for Applied Mathematics, Jülich, Germany, (2005)The MOSFET Virtual Organisation: Grid Computing for Simulation in Nanoelectronics., , , and . eScience, page 271-276. IEEE Computer Society, (2009)