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Degradation induced by 2-MeV alpha particles on AlGaN/GaN high electron mobility transistors., , , , , , and . Microelectronics Reliability, 46 (9-11): 1750-1753 (2006)Enhancement of RF-MEMS switch reliability through an active anti-stiction heat-based mechanism., , , , , and . Microelectronics Reliability, 50 (9-11): 1599-1603 (2010)Thermally-activated degradation of InGaN-based laser diodes: Effect on threshold current and forward voltage., , , , , , , , , and 2 other author(s). Microelectronics Reliability, 54 (9-10): 2147-2150 (2014)High brightness GaN LEDs degradation during dc and pulsed stress., , , , , , , and . Microelectronics Reliability, 46 (9-11): 1720-1724 (2006)Single- and double-heterostructure GaN-HEMTs devices for power switching applications., , , , , , , , , and . Microelectronics Reliability, 52 (9-10): 2426-2430 (2012)Reliability analysis of InGaN Blu-Ray laser diode., , , , , , , and . Microelectronics Reliability, 49 (9-11): 1236-1239 (2009)Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs., , and . Microelectronics Reliability, 41 (9-10): 1579-1584 (2001)Indirect techniques for channel temperature estimation of HEMT microwave transistors: Comparison and limits., , , , , and . Microelectronics Reliability, 52 (9-10): 2093-2097 (2012)Degradation of InGaN-based LEDs related to charge diffusion and build-up., , , , and . Microelectronics Reliability, (2016)Reliability Investigation of GaN HEMTs for MMICs Applications., , , , and . Micromachines, 5 (3): 570-582 (2014)