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Resistive switching in organic memory devices for flexible applications., , , , , and . ISCAS, page 838-841. IEEE, (2014)Novel vertical channel double gate structures for high density and low power flash memory applications., , , , and . Science in China Series F: Information Sciences, 51 (6): 799-806 (2008)Hiearchical Crossbar Design for ReRAM based Write Variation Inhibition on-chip learning., , , , , and . NVMTS, page 1-3. IEEE, (2018)Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer., , , , , , , , , and . NVMTS, page 1-3. IEEE, (2018)An electronic synapse based on tantalum oxide material., , , , and . NVMTS, page 1-4. IEEE, (2015)Rotational Pattern Recognition by Spiking Correlated Neural Network Based on Dual-Gated MoS 2 Neuristor., , , , , and . Adv. Intell. Syst., 2 (11): 2000102 (2020)Editor's note., , , and . SCIENCE CHINA Information Sciences, 54 (5): 913-914 (2011)Design and Implementation of a Peripheral Bus Based on a New Kind of Reconfigurable System., , and . DASC, page 286-291. IEEE Computer Society, (2011)Margin Dependence on Array Size for Asymmetric Resistive Memory Cell., , , , , and . NVMTS, page 1-3. IEEE, (2018)Influence of selector-introduced compliance current on HfOx RRAM switching operation., , , , , and . NVMTS, page 1-3. IEEE, (2015)