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Rapid-turnaround characterization methods for MRAM development.

, , and . IBM Journal of Research and Development, 50 (1): 55-68 (2006)

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Rapid-turnaround characterization methods for MRAM development., , and . IBM Journal of Research and Development, 50 (1): 55-68 (2006)Single-domain model for toggle MRAM.. IBM Journal of Research and Development, 50 (1): 69-80 (2006)Low-current Spin Transfer Torque MRAM., , , , , , , , , and 10 other author(s). VLSI-DAT, page 1-2. IEEE, (2017)Two-level BEOL processing for rapid iteration in MRAM development., , , , , , , , , and 1 other author(s). IBM Journal of Research and Development, 50 (1): 41-54 (2006)