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A Compact Model for Static and Dynamic Operation of Symmetric Double-Gate Junction FETs., , , and . ESSDERC, page 238-241. IEEE, (2018)Compact model for variability of low frequency noise due to number fluctuation effect., and . ESSDERC, page 464-467. IEEE, (2016)Extending a 65nm CMOS process design kit for high total ionizing dose effects., , , , , , , , , and . MOCAST, page 1-4. IEEE, (2018)Compact Modeling of Low Frequency Noise and Thermal Noise in Junction Field Effect Transistors., , and . ESSDERC, page 198-201. IEEE, (2019)Determining MOSFET Parameters in Moderate Inversion., , and . DDECS, page 349-352. IEEE Computer Society, (2007)Estimating Key Parameters in the EKV MOST Model for Analogue Desgin and Simulation., , and . ISCAS, page 1588-1591. IEEE, (1995)FOSS EKV 2.6 parameter extractor., , , , , , , and . MIXDES, page 181-186. IEEE, (2015)An Improved Model for Circulating Bearing Currents in Inverter-Fed AC Machines., , , , , and . ICIT, page 225-230. IEEE, (2019)Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose., , , , , , and . MIXDES, page 306-309. IEEE, (2019)FOSS EKV2.6 Verilog-A Compact MOSFET Model., , , , , , , , , and 12 other author(s). ESSDERC, page 190-193. IEEE, (2019)