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Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas, , , , , , , , , and 2 other author(s). Nanotechnology, 31 (34): 345203 (June 2020)Nanoelektronische Bauelementkonzepte auf Gruppe-IV-Basis für „End of the Roadmap“, „Beyond CMOS“ und „More than Moore“. Universität Stuttgart, Stuttgart, Habilitationsschrift, (2016)Optical critical points of SixGe1-x-ySny alloys with high Si content, , , , , , , , and . Semiconductor science and technology, 32 (12): 124004 (2017)Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111), , , , , , , , and . Semiconductor science and technology, 33 (9): 095008 (2018)Compositional dependence of the band-gap of Ge1-x-ySixSny alloys, , , , , , , , , and 1 other author(s). Applied physics letters, 108 (24): 242104 (2016)Engineering of Germanium Tunnel Junctions for Optical Applications, , , , , and . IEEE Photonics Journal, (2018)Zener tunnel-injection for Ge optical amplifiers, lasers and modulators (invited), , , , and . 2017 IEEE 14th International Conference on Group IV Photonics (GFP), page 11-12. IEEE, (2017)Tuning of Curie temperature in Mn5Ge3 films, , , , , , , , , and . Journal of applied physics, 131 (10): 105102 (2022)Electroluminescence of GeSn/Ge MQW LEDs on Si substrate, , , , , , , , , and 2 other author(s). Optics letters, (2015)Photoluminescence from ultrathin Ge-rich multiple quantum wells observed up to room temperature: Experiments and modeling, , , , , , , , , and 2 other author(s). Physical review. B, Condensed matter and materials physics, 94 (24): 245304 (2016)