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Impact of gate drive voltage on avalanche robustness of trench IGBTs.

, , , , and . Microelectronics Reliability, 54 (9-10): 1828-1832 (2014)

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SiC power MOSFETs performance, robustness and technology maturity., , , , , and . Microelectronics Reliability, (2016)Analysis of large area Trench-IGBT current distribution under UIS test with the aid of lock-in thermography., , , , , , , and . Microelectronics Reliability, 50 (9-11): 1725-1730 (2010)Thermal-aware design and fault analysis of a DC/DC parallel resonant converter., , , and . Microelectronics Reliability, 54 (9-10): 1833-1838 (2014)Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs., , , , and . Microelectronics Reliability, 54 (9-10): 2185-2190 (2014)Impact of gate drive voltage on avalanche robustness of trench IGBTs., , , , and . Microelectronics Reliability, 54 (9-10): 1828-1832 (2014)Detection of localized UIS failure on IGBTs with the aid of lock-in thermography., , , , , , , and . Microelectronics Reliability, 48 (8-9): 1432-1434 (2008)On the avalanche ruggedness of optimized termination structure for 600 V punch-through IGBTs., , , , and . Microelectronics Reliability, (2016)Model-Order Reduction Procedure for Fast Dynamic Electrothermal Simulation of Power Converters., , , , , , , , , and . ApplePies, volume 512 of Lecture Notes in Electrical Engineering, page 81-87. Springer, (2017)Experimental analysis of electro-thermal instability in SiC Power MOSFETs., , , and . Microelectronics Reliability, 53 (9-11): 1739-1744 (2013)Wide Range AWG-Based FBG Interrogation System With Improved Sensitivity., , , , and . PRIME, page 149-152. IEEE, (2019)