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Disambiguation of "Stathis, James H."

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Reliability of advanced high-k/metal-gate n-FET devices.

, , and . Microelectronics Reliability, 50 (9-11): 1199-1202 (2010)

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Univ. -Prof. Dr. James Foster University of Stuttgart

H. Binz

H. Bungartz

H. Binz

H. Binz

 

Other publications of authors with the same name

Circuit implications of gate oxide breakdown., , and . Microelectronics Reliability, 43 (8): 1193-1197 (2003)A critical analysis of sampling-based reconstruction methodology for dielectric breakdown systems (BEOL/MOL/FEOL)., , , , , and . IRPS, page 2. IEEE, (2015)Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror., , , , and . Microelectronics Reliability, 47 (4-5): 665-668 (2007)Separation of interface states and electron trapping for hot carrier degradation in ultra-scaled replacement metal gate n-FinFET., , , , and . IRPS, page 4. IEEE, (2015)Analysis of the effect of the gate oxide breakdown on SRAM stability., , , , , , , , , and . Microelectronics Reliability, 42 (9-11): 1445-1448 (2002)Reliability of advanced high-k/metal-gate n-FET devices., , and . Microelectronics Reliability, 50 (9-11): 1199-1202 (2010)A novel approach to characterization of progressive breakdown in high-k/metal gate stacks., , , , , , , , and . Microelectronics Reliability, 48 (11-12): 1759-1764 (2008)Reliability of ultra-thin oxides in CMOS circuits., , , and . Microelectronics Reliability, 43 (9-11): 1353-1360 (2003)On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs., , , , , and . IRPS, page 1-8. IEEE, (2019)The physics of NBTI: What do we really know?. IRPS, page 2. IEEE, (2018)