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Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests., , , , and . Microelectronics Reliability, (2018)Measure of high frequency input impedance to study the instability of power devices in short circuit., , , , and . Microelectronics Reliability, (2018)IGBT RBSOA non-destructive testing methods: Analysis and discussion., , and . Microelectronics Reliability, 50 (9-11): 1731-1737 (2010)Experimental study of power MOSFET's gate damage in radiation environment., , , , , and . Microelectronics Reliability, 46 (9-11): 1854-1857 (2006)Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions., , , , , and . Microelectronics Reliability, 49 (9-11): 1033-1037 (2009)Editorial., and . Microelectronics Reliability, 50 (9-11): 1191-1192 (2010)A new test methodology for an exhaustive study of single-event-effects on power MOSFETs., , , , , , , , , and 2 other author(s). Microelectronics Reliability, 51 (9-11): 1995-1998 (2011)The high frequency behaviour of high voltage and current IGBT modules., , , and . Microelectronics Reliability, 46 (9-11): 1848-1853 (2006)Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT., , , , , , , and . Microelectronics Reliability, 55 (9-10): 1496-1500 (2015)Non-destructive tester for single event burnout of power diodes., , , and . Microelectronics Reliability, 41 (9-10): 1725-1729 (2001)