%0 Conference Paper %1 burghartz1989selfaligned %A Burghartz, Joachim N. %A Mader, Siegfried R. %A Meyerson, Bernard S. %A Ginsberg, Barry J. %A Stork, Johannes M. C. %A Sun, Jack Yuan-Chen %B Technical digest : International Electron Devices Meeting 1989, IEDM, Washington, D.C. December 3 - 6, 1989 %C Piscataway, New Jersey %D 1989 %I IEEE %K INES %P 229-232 %R 10.1109/IEDM.1989.74267 %T Self-aligned bipolar npn transistor with 60 nm epitaxial base %@ 0-7803-0817-4

@inproceedings{burghartz1989selfaligned, added-at = {2019-04-12T12:55:26.000+0200}, address = {Piscataway, New Jersey}, author = {Burghartz, Joachim N. and Mader, Siegfried R. and Meyerson, Bernard S. and Ginsberg, Barry J. and Stork, Johannes M. C. and Sun, Jack Yuan-Chen}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/22e1db1f9553dd502cbf84161d99551a5/kevin.konnerth}, booktitle = {Technical digest : International Electron Devices Meeting 1989, IEDM, Washington, D.C. December 3 - 6, 1989 }, doi = {10.1109/IEDM.1989.74267}, eventdate = {1989-12-03/1989-12-06}, eventtitle = {International Electron Devices Meeting 1989}, interhash = {ff79708ed0c2972eb1ca740cd58886fa}, intrahash = {2e1db1f9553dd502cbf84161d99551a5}, isbn = {0-7803-0817-4}, issn = {0163-1918}, keywords = {INES}, pages = {229-232}, publisher = {IEEE}, timestamp = {2019-04-12T10:55:26.000+0200}, title = {Self-aligned bipolar npn transistor with 60 nm epitaxial base}, venue = {Washington D.C., USA}, year = 1989 }