Insulated Gate Bipolar Transistors based on Pure Boron Collectors
A. Elsayed, J. Dick, and J. Schulze. 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), page 343-346. Piscataway, NJ, IEEE, (2019)
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%0 Conference Paper
%1 elsayed2019insulated
%A Elsayed, Ahmed
%A Dick, Jan Frederik
%A Schulze, Jörg
%B 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
%C Piscataway, NJ
%D 2019
%I IEEE
%K
%P 343-346
%T Insulated Gate Bipolar Transistors based on Pure Boron Collectors
%@ 978-1-7281-0581-9 and 978-1-72810-580-2 and 978-1-72810-579-6
@inproceedings{elsayed2019insulated,
added-at = {2023-08-31T16:43:11.000+0200},
address = {Piscataway, NJ},
affiliation = {Elsayed, A (Reprint Author), Univ Stuttgart, Inst Semicond Engn, D-70569 Stuttgart, Germany.
Elsayed, Ahmed; Dick, Jan Frederik; Schulze, Joerg, Univ Stuttgart, Inst Semicond Engn, D-70569 Stuttgart, Germany.},
author = {Elsayed, Ahmed and Dick, Jan Frederik and Schulze, Jörg},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2e4ad74c6ae4e7fc6cd006ccff2b4bb41/puma-wartung},
booktitle = {2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)},
eventdate = {2019-05-19/2019-05-23},
eventtitle = {31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, PEOPLES R CHINA, MAY 19-23, 2019},
interhash = {bc89174589fd1ad750af58a2c234a83e},
intrahash = {e4ad74c6ae4e7fc6cd006ccff2b4bb41},
isbn = {{978-1-7281-0581-9} and {978-1-72810-580-2} and {978-1-72810-579-6}},
keywords = {},
language = {eng},
pages = {343-346},
publisher = {IEEE},
timestamp = {2023-08-31T14:43:11.000+0200},
title = {Insulated Gate Bipolar Transistors based on Pure Boron Collectors},
unique-id = {ISI:000484987200084},
venue = {Shanghai, China},
year = 2019
}
