%0 Journal Article %1 oehme2014franzkeldysh %A Oehme, Michael %A Kostecki, K. %A Schmid, M. %A Kaschel, Mathias %A Gollhofer, M. %A Ye, K. %A Widmann, D. %A Koerner, R. %A Bechler, S. %A Kasper, Erich %A Schulze, Jörg %D 2014 %I American Institute of Physics %J Applied Physics Letters %K %N 16 %P 161115 %R 10.1063/1.4873935 %T Franz-Keldysh effect in GeSn pin photodetectors %V 104 %X The optical properties and the Franz-Keldysh effect at the direct band gap of GeSn alloys with Sn concentrations up to 4.2% at room temperature were investigated. The GeSn material was embedded in the intrinsic region of a Ge heterojunction photodetector on Si substrates. The layer structure was grown by means of ultra-low temperature molecular beam epitaxy. The absorption coefficient as function of photon energy and the direct bandgap energies were determined. In all investigated samples, the Franz-Keldysh effect can be observed. A maximum absorption ratio of 1.5 was determined for 2% Sn for a voltage swing of 3 V.

@article{oehme2014franzkeldysh, abstract = {The optical properties and the Franz-Keldysh effect at the direct band gap of GeSn alloys with Sn concentrations up to 4.2% at room temperature were investigated. The GeSn material was embedded in the intrinsic region of a Ge heterojunction photodetector on Si substrates. The layer structure was grown by means of ultra-low temperature molecular beam epitaxy. The absorption coefficient as function of photon energy and the direct bandgap energies were determined. In all investigated samples, the Franz-Keldysh effect can be observed. A maximum absorption ratio of 1.5 was determined for 2% Sn for a voltage swing of 3 V.}, added-at = {2023-08-31T16:24:54.000+0200}, author = {Oehme, Michael and Kostecki, K. and Schmid, M. and Kaschel, Mathias and Gollhofer, M. and Ye, K. and Widmann, D. and Koerner, R. and Bechler, S. and Kasper, Erich and Schulze, Jörg}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/23a86bb0bd71e6a61f31c70df671275f9/puma-wartung}, doi = {10.1063/1.4873935}, interhash = {af9c013ba35bd3026c92896880006985}, intrahash = {3a86bb0bd71e6a61f31c70df671275f9}, issn = {0003-6951}, journal = {Applied Physics Letters}, keywords = {}, language = {eng}, number = 16, pages = 161115, publisher = {American Institute of Physics}, timestamp = {2023-08-31T14:24:54.000+0200}, title = {Franz-Keldysh effect in GeSn pin photodetectors}, volume = 104, year = 2014 }