%0 Journal Article %1 werner2011germaniumtin %A Werner, J. %A Oehme, Michael %A Schmid, M. %A Kaschel, M. %A Schirmer, A. %A Kasper, Erich %A Schulze, Jörg %D 2011 %I AIP Publishing %J Applied Physics Letters %K %N 6 %P 061108 %R 10.1063/1.3555439 %T Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy %V 98 %X GeSn heterojunction p-i-n diodes with a Sn content of 0.5% are grown with a special low temperature molecular beam epitaxy. The Sn incorporation in Ge is facilitated by a very low temperature growth step in order to suppress Sn surface segregation. Diodes with sharp doping transitions are realized as double mesa structures with a diameter from 1.5 up to 80 μm. An optical responsivity of these GeSn diodes of 0.1 A/W at a wavelength of λ=1.55 μm is measured. In comparison with a pure Ge detector the optical responsivity is increased by factor of 3 as a result of Sn caused band gap reduction.

@article{werner2011germaniumtin, abstract = {GeSn heterojunction p-i-n diodes with a Sn content of 0.5% are grown with a special low temperature molecular beam epitaxy. The Sn incorporation in Ge is facilitated by a very low temperature growth step in order to suppress Sn surface segregation. Diodes with sharp doping transitions are realized as double mesa structures with a diameter from 1.5 up to 80 μm. An optical responsivity of these GeSn diodes of 0.1 A/W at a wavelength of λ=1.55 μm is measured. In comparison with a pure Ge detector the optical responsivity is increased by factor of 3 as a result of Sn caused band gap reduction.}, added-at = {2023-08-31T16:21:19.000+0200}, author = {Werner, J. and Oehme, Michael and Schmid, M. and Kaschel, M. and Schirmer, A. and Kasper, Erich and Schulze, Jörg}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/240b71167836a3f9de67ebcd74313e090/puma-wartung}, doi = {10.1063/1.3555439}, interhash = {6c6cf6976287a879929e4dca4a4ccd7d}, intrahash = {40b71167836a3f9de67ebcd74313e090}, issn = {{0003-6951} and {1077-3118}}, journal = {Applied Physics Letters}, keywords = {}, language = {eng}, number = 6, pages = 061108, publisher = {AIP Publishing}, timestamp = {2023-08-31T14:21:19.000+0200}, title = {Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy}, volume = 98, year = 2011 }