@article{journals/dt/LiWNGMSGLYDN19,
added-at = {2019-07-05T00:00:00.000+0200},
author = {Li, Xueqing and Wu, Juejian and Ni, Kai and George, Sumitha and Ma, Kaisheng and Sampson, John and Gupta, Sumeet Kumar and Liu, Yongpan and Yang, Huazhong and Datta, Suman and Narayanan, Vijaykrishnan},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2ef1436ae3b196f4eb66d210b2fdfe211/dblp},
ee = {https://doi.org/10.1109/MDAT.2019.2902094},
interhash = {6a30d8b00c78f2cb13c6b16081afc8ac},
intrahash = {ef1436ae3b196f4eb66d210b2fdfe211},
journal = {IEEE Design & Test},
keywords = {dblp},
number = 3,
pages = {39-45},
timestamp = {2019-09-27T11:22:11.000+0200},
title = {Design of 2T/Cell and 3T/Cell Nonvolatile Memories with Emerging Ferroelectric FETs.},
url = {http://dblp.uni-trier.de/db/journals/dt/dt36.html#LiWNGMSGLYDN19},
volume = 36,
year = 2019
}