%0 Conference Paper %1 hirning2022online %A Hirning, David %A Bauer, Luca %A Ruthardt, Johannes %A Haarer, Jörg %A Ziegler, Philipp %A Roth-Stielow, Jörg %B 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) %C Piscataway %D 2022 %I IEEE %K %T Online Junction Temperature Measurement of SiC-MOSFETs via Gate Impedance Using the Gate-Signal Injection Method %U https://ieeexplore.ieee.org/document/9907316 %X This paper presents a method for junction temperature monitoring of SiC-MOSFETs based on a high-frequency gate-signal injection. The signal is injected during steady state (e.g. off-state) resulting in a current response, which depends on the temperature dependent gate impedance. The external gate resistor is used as a current shunt to capture the current response. The resulting signal contains the junction temperature information due to the temperature dependency of the gate impedance. This paper focuses on a sinusoidal approach to overcome the challenges due to the temperature dependent parasitic capacitance of the gate circuit. Measurements show the proof of concept, however, there are still challenges to face. %@ 978-9-0758-1539-9

@inproceedings{hirning2022online, abstract = {This paper presents a method for junction temperature monitoring of SiC-MOSFETs based on a high-frequency gate-signal injection. The signal is injected during steady state (e.g. off-state) resulting in a current response, which depends on the temperature dependent gate impedance. The external gate resistor is used as a current shunt to capture the current response. The resulting signal contains the junction temperature information due to the temperature dependency of the gate impedance. This paper focuses on a sinusoidal approach to overcome the challenges due to the temperature dependent parasitic capacitance of the gate circuit. Measurements show the proof of concept, however, there are still challenges to face.}, added-at = {2023-09-07T09:44:14.000+0200}, address = {Piscataway}, author = {Hirning, David and Bauer, Luca and Ruthardt, Johannes and Haarer, Jörg and Ziegler, Philipp and Roth-Stielow, Jörg}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/25cb57569c7abf816e198d93e68a853fc/unibiblio}, booktitle = {2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)}, eventdate = {2022-09-05/2022-09-09}, eventtitle = {2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe)}, interhash = {3028b866af458cacf46f01933b925af5}, intrahash = {5cb57569c7abf816e198d93e68a853fc}, isbn = {978-9-0758-1539-9}, keywords = {}, language = {eng}, publisher = {IEEE}, timestamp = {2023-09-07T07:44:14.000+0200}, title = {Online Junction Temperature Measurement of SiC-MOSFETs via Gate Impedance Using the Gate-Signal Injection Method}, url = {https://ieeexplore.ieee.org/document/9907316}, venue = {Hannover}, year = 2022 }