%0 Journal Article
%1 burghartz1991selfaligned
%A Burghartz, Joachim N.
%A Mader, Siegfried R.
%A Ginsberg, Barry J.
%A Meyerson, Bernard S.
%A Stork, Johannes M. C.
%A Stanis, Carol L.
%A Sun, Jack Yuan-Chen
%A Polcari, M. R.
%C Piscataway, New Jersey
%D 1991
%I IEEE
%J IEEE Transactions on Electron Devices
%K INES firstnamemissing
%N 2
%P 378-385
%R 10.1109/16.69920
%T Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technology
%V 38
@article{burghartz1991selfaligned,
added-at = {2019-04-12T11:11:06.000+0200},
address = {Piscataway, New Jersey},
author = {Burghartz, Joachim N. and Mader, Siegfried R. and Ginsberg, Barry J. and Meyerson, Bernard S. and Stork, Johannes M. C. and Stanis, Carol L. and Sun, Jack Yuan-Chen and Polcari, M. R.},
biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2fbb1f4d37db4cb714e3e5e1ece9be31e/kevin.konnerth},
doi = {10.1109/16.69920},
interhash = {3700f6692fb41bf94abf46f4433aa8d0},
intrahash = {fbb1f4d37db4cb714e3e5e1ece9be31e},
issn = {{0018-9383} and {1557-9646}},
journal = {IEEE Transactions on Electron Devices},
keywords = {INES firstnamemissing},
month = feb,
number = 2,
pages = {378-385},
publisher = {IEEE},
timestamp = {2019-04-12T09:11:06.000+0200},
title = {Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technology},
volume = 38,
year = 1991
}
