%0 Journal Article %1 burghartz1991selfaligned %A Burghartz, Joachim N. %A Mader, Siegfried R. %A Ginsberg, Barry J. %A Meyerson, Bernard S. %A Stork, Johannes M. C. %A Stanis, Carol L. %A Sun, Jack Yuan-Chen %A Polcari, M. R. %C Piscataway, New Jersey %D 1991 %I IEEE %J IEEE Transactions on Electron Devices %K INES firstnamemissing %N 2 %P 378-385 %R 10.1109/16.69920 %T Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technology %V 38

@article{burghartz1991selfaligned, added-at = {2019-04-12T11:11:06.000+0200}, address = {Piscataway, New Jersey}, author = {Burghartz, Joachim N. and Mader, Siegfried R. and Ginsberg, Barry J. and Meyerson, Bernard S. and Stork, Johannes M. C. and Stanis, Carol L. and Sun, Jack Yuan-Chen and Polcari, M. R.}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2fbb1f4d37db4cb714e3e5e1ece9be31e/kevin.konnerth}, doi = {10.1109/16.69920}, interhash = {3700f6692fb41bf94abf46f4433aa8d0}, intrahash = {fbb1f4d37db4cb714e3e5e1ece9be31e}, issn = {{0018-9383} and {1557-9646}}, journal = {IEEE Transactions on Electron Devices}, keywords = {INES firstnamemissing}, month = feb, number = 2, pages = {378-385}, publisher = {IEEE}, timestamp = {2019-04-12T09:11:06.000+0200}, title = {Self-aligned bipolar epitaxial base n-p-n transistors by selective epitaxy emitter window (SEEW) technology}, volume = 38, year = 1991 }