%0 Conference Paper %1 9596924 %A Weißhaupt, David %A Funk, Hannes S. %A Sürgers, Christoph %A Fischer, Gerda %A Oehme, Michael %A Schwarz, Daniel %A Fischer, Inga A. %A van Slageren, Joris %A Schulze, Jörg %B 2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO) %D 2021 %K iht j.schulze.iht journal professional_meetings %P 45-49 %R 10.23919/MIPRO52101.2021.9596924 %T Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics %X Ge two-dimensional hole gases (2DHG) formed in strained, modulation-doped quantum-wells are highly suitable for future spintronic applications due to their good electronic transport properties. For electrical spin injection into a Ge 2DHG, the ferromagnetic alloy Mn 5 Ge 3 can be used as a contact material. The Mn 5 Ge 3 layer can be grown as an interlayer by interdiffusion between an evaporated Mn layer and the Ge 2DHG. In this paper, we report on the growth of a ferromagnetic Mn 5 Ge 3 thin film directly on the strained Ge. To this end, the Si 20 Ge 80 capping layer covering the channel was selectively removed using Ar + ion milling. We investigate the magnetic properties of Mn 5 Ge 3 grown on a Ge (111) 2DHG by superconducting quantum interference device magnetometry and compare the results to an unetched Mn 5 Ge 3 on Ge (111) reference. Furthermore, temperature-dependent Hall measurements using the Mn 5 Ge 3 contacts on the Ge (111) 2DHG confirm the electrical contact to the high mobility 2DHG. These results are an important step towards electrical spin injection into a Ge 2DHG which is a promising material for future spintronic applications.

@inproceedings{9596924, abstract = {Ge two-dimensional hole gases (2DHG) formed in strained, modulation-doped quantum-wells are highly suitable for future spintronic applications due to their good electronic transport properties. For electrical spin injection into a Ge 2DHG, the ferromagnetic alloy Mn 5 Ge 3 can be used as a contact material. The Mn 5 Ge 3 layer can be grown as an interlayer by interdiffusion between an evaporated Mn layer and the Ge 2DHG. In this paper, we report on the growth of a ferromagnetic Mn 5 Ge 3 thin film directly on the strained Ge. To this end, the Si 20 Ge 80 capping layer covering the channel was selectively removed using Ar + ion milling. We investigate the magnetic properties of Mn 5 Ge 3 grown on a Ge (111) 2DHG by superconducting quantum interference device magnetometry and compare the results to an unetched Mn 5 Ge 3 on Ge (111) reference. Furthermore, temperature-dependent Hall measurements using the Mn 5 Ge 3 contacts on the Ge (111) 2DHG confirm the electrical contact to the high mobility 2DHG. These results are an important step towards electrical spin injection into a Ge 2DHG which is a promising material for future spintronic applications.}, added-at = {2021-11-23T14:29:19.000+0100}, author = {Weißhaupt, David and Funk, Hannes S. and Sürgers, Christoph and Fischer, Gerda and Oehme, Michael and Schwarz, Daniel and Fischer, Inga A. and van Slageren, Joris and Schulze, Jörg}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2e507f0e7c7c3774d5265fab9b6389814/ihtpublikation}, booktitle = {2021 44th International Convention on Information, Communication and Electronic Technology (MIPRO)}, description = {Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics | IEEE Conference Publication | IEEE Xplore}, doi = {10.23919/MIPRO52101.2021.9596924}, interhash = {2ca48ceaf5c8ab35830084798b85939d}, intrahash = {e507f0e7c7c3774d5265fab9b6389814}, issn = {2623-8764}, keywords = {iht j.schulze.iht journal professional_meetings}, month = {Sep.}, pages = {45-49}, timestamp = {2021-11-23T13:30:39.000+0100}, title = {Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics}, year = 2021 }