Abstract
Ge two-dimensional hole gases (2DHG) formed in strained, modulation-doped quantum-wells are highly suitable for future spintronic applications due to their good electronic transport properties. For electrical spin injection into a Ge 2DHG, the ferromagnetic alloy Mn 5 Ge 3 can be used as a contact material. The Mn 5 Ge 3 layer can be grown as an interlayer by interdiffusion between an evaporated Mn layer and the Ge 2DHG. In this paper, we report on the growth of a ferromagnetic Mn 5 Ge 3 thin film directly on the strained Ge. To this end, the Si 20 Ge 80 capping layer covering the channel was selectively removed using Ar + ion milling. We investigate the magnetic properties of Mn 5 Ge 3 grown on a Ge (111) 2DHG by superconducting quantum interference device magnetometry and compare the results to an unetched Mn 5 Ge 3 on Ge (111) reference. Furthermore, temperature-dependent Hall measurements using the Mn 5 Ge 3 contacts on the Ge (111) 2DHG confirm the electrical contact to the high mobility 2DHG. These results are an important step towards electrical spin injection into a Ge 2DHG which is a promising material for future spintronic applications.
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