%0 Conference Paper %1 9595166 %A Ruthardt, Johannes %A Hirning, David %A Sharma, Kanuj %A Nitzsche, Maximilian %A Ziegler, Philipp %A Fischer, Manuel %A Roth-Stielow, Jörg %B 2021 IEEE Energy Conversion Congress and Exposition (ECCE) %D 2021 %K ecce fischer hirning ilea nitzsche roth-stielow ruthardt ziegler %P 5354-5359 %R 10.1109/ECCE47101.2021.9595166 %T Investigations on Online Junction Temperature Measurement for SiC-MOSFETs Using the Gate-Signal Injection Method %U https://ieeexplore.ieee.org/document/9595166 %X This paper presents investigations on the suitability of using the gate-signal injection method for junction temperature measurement of SiC-MOSFETs. The method is based on the temperature sensitivity of the internal gate resistance. A high frequency signal is injected into the gate circuit while the MOSFET is operating. The response of the injected signal is a high frequency current, which depends on the temperature sensitive gate circuit’s impedance. This current causes a voltage drop across the external gate resistor. This voltage depends on the junction temperature and is evaluated. This method was successfully implemented on Si-IGBTs in the past. However, there are challenges to face in implementing this method on SiC-MOSFETs. This paper shows the challenges and proposes solutions to overcome them.

@inproceedings{9595166, abstract = {This paper presents investigations on the suitability of using the gate-signal injection method for junction temperature measurement of SiC-MOSFETs. The method is based on the temperature sensitivity of the internal gate resistance. A high frequency signal is injected into the gate circuit while the MOSFET is operating. The response of the injected signal is a high frequency current, which depends on the temperature sensitive gate circuit’s impedance. This current causes a voltage drop across the external gate resistor. This voltage depends on the junction temperature and is evaluated. This method was successfully implemented on Si-IGBTs in the past. However, there are challenges to face in implementing this method on SiC-MOSFETs. This paper shows the challenges and proposes solutions to overcome them.}, added-at = {2022-01-20T08:37:27.000+0100}, author = {Ruthardt, Johannes and Hirning, David and Sharma, Kanuj and Nitzsche, Maximilian and Ziegler, Philipp and Fischer, Manuel and Roth-Stielow, Jörg}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2dcc954fd111167a3e5f95c081e565a9f/ilea}, booktitle = {2021 IEEE Energy Conversion Congress and Exposition (ECCE)}, description = {Investigations on Online Junction Temperature Measurement for SiC-MOSFETs Using the Gate-Signal Injection Method | IEEE Conference Publication | IEEE Xplore}, doi = {10.1109/ECCE47101.2021.9595166}, interhash = {e6243b1b30edf1524da7c0c780bf3a56}, intrahash = {dcc954fd111167a3e5f95c081e565a9f}, issn = {2329-3748}, keywords = {ecce fischer hirning ilea nitzsche roth-stielow ruthardt ziegler}, month = oct, pages = {5354-5359}, timestamp = {2022-01-20T07:37:27.000+0100}, title = {Investigations on Online Junction Temperature Measurement for SiC-MOSFETs Using the Gate-Signal Injection Method}, url = {https://ieeexplore.ieee.org/document/9595166}, year = 2021 }