%0 Journal Article %1 choudhary2024lowtemperature %A Choudhary, Sumit %A Schwarz, Daniel %A Funk, Hannes S. %A Sharma, Satinder K. %A Schulze, Jörg %D 2024 %I IEEE %J IEEE transactions on electron devices %K ubs_10005 ubs_20007 ubs_30069 ubs_40356 unibibliografie wos %N 9 %P 5182-5189 %R 10.1109/TED.2024.3430244 %T Low-Temperature Processed Ni/GeSn Optimal Contacts for Junctionless GeSn-on-Si FinFETs %V 71

@article{choudhary2024lowtemperature, added-at = {2025-01-13T14:12:11.000+0100}, affiliation = {Sharma, SK (Corresponding Author), Indian Inst Technol IIT Mandi, Sch Comp \& Elect Engn, Mandi 175005, Himachal Prades, India. Choudhary, Sumit; Sharma, Satinder K., Indian Inst Technol IIT Mandi, Sch Comp \& Elect Engn, Mandi 175005, Himachal Prades, India. Choudhary, Sumit, Gurugram Univ, Dept Engn \& Technol, Gurugram 122003, Haryana, India. Schwarz, Daniel; Funk, Hannes S.; Schulze, Joerg, Univ Stuttgart, Inst Semicond Engn, D-70569 Stuttgart, Germany.}, author = {Choudhary, Sumit and Schwarz, Daniel and Funk, Hannes S. and Sharma, Satinder K. and Schulze, Jörg}, biburl = {https://puma.ub.uni-stuttgart.de/bibtex/2cb34d2f96e4c9b0f4b8b96dba5d34eb4/unibiblio}, doi = {10.1109/TED.2024.3430244}, interhash = {28c69c4d9496e767480453c2883dbe81}, intrahash = {cb34d2f96e4c9b0f4b8b96dba5d34eb4}, issn = {{0018-9383} and {1557-9646}}, journal = {IEEE transactions on electron devices}, keywords = {ubs_10005 ubs_20007 ubs_30069 ubs_40356 unibibliografie wos}, language = {eng}, number = 9, pages = {5182-5189}, publisher = {IEEE}, research-areas = {Engineering; Physics}, timestamp = {2025-01-13T14:12:11.000+0100}, title = {Low-Temperature Processed Ni/GeSn Optimal Contacts for Junctionless GeSn-on-Si FinFETs}, unique-id = {WOS:001288417300001}, volume = 71, year = 2024 }